unisonic technologies co., ltd 2n5088/2n5089 npn epitaxial silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2012 unisonic technologies co., ltd qw-r201-040.ba npn general purpose amplifier ? description the devices are designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 a ~ 50ma. to-92 1 ? ordering information order number package pin assignment packing lead free halogen free 1 2 3 2n5088l-t92-b 2n5088g-t92-b to-92 e b c tape box 2n5088l-t92-k 2n5088g-t92-k to-92 e b c bulk 2n5088l-t92-r 2n5088g-t92-r to-92 e b c tape reel 2n5089l-t92-b 2N5089G-T92-B to-92 e b c tape box 2n5089l-t92-k 2n5089g-t92-k to-92 e b c bulk 2n5089l-t92-r 2n5089g-t92-r to-92 e b c tape reel note: pin assignment: e: emitte r b: base c: collector
2n5088/2n5089 npn epitaxial silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r201-040.ba ? absolute maximum rating (t a =25 , unless otherwise noted) parameter symbol ratings unit collector-emitter voltage 2n5088 v ceo 30 v 2n5089 25 collector-base voltage 2n5088 v cbo 35 v 2n5089 30 emitter-base voltage v ebo 4.5 v collector current-continuous i c 100 ma power dissipation p d 625 mw derate above 25 5 mw/ junction temperature t j 150 storage temperature t stg -55 ~ +150 note 1. these ratings are based on a maximu m junction temperature of 150 degrees c. 2. these are steady state lim its. the factory should be consulted on ap plications involving pulsed or low duty cycle operations. 3. absolute maximum ratings are those values bey ond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data (t a =25 , unless otherwise noted) parameter symbol ratings unit junction to ambient ja 200 /w junction to case jc 83.3 /w ? electrical characteristics (t a =25 , unless otherwise noted) parameter symbol test conditions min typ max unit off characteristics collector-emitter breakdown voltage 2n5088 v( br)ceo i c =1.0ma, i b =0 (note) 30 v 2n5089 25 collector-base breakdown voltage 2n5088 v (br)cbo i c =100 a, i e =0 35 v 2n5089 30 collector cut-off current 2n5088 i cbo v cb =20v, i e =0 50 na 2n5089 v cb =15v, i e =0 50 emitter cutoff current i ebo v eb =3.0v, i c =0 50 na v eb =4.5v, i c =0 100 dc current gain h fe v ce =5.0v, i c =100 a 2n5088 300 900 2n5089 400 1200 v ce =5.0v, i c =1.0ma 2n5088 350 2n5089 450 v ce =5.0v, i c =10ma (note) 2n5088 300 2n5089 400 collector-emitter satu ration voltage v ce ( sat ) i c =10ma, i b =1.0ma 0.5 v base-emitter on voltage v be ( on ) i c =10ma, v ce =5.0v 0.8 v small signal characteristics current gain-bandwidth product f t v ce =5.0ma, i c =500 a, f=20mhz 50 mhz collector-base capacitance c cb v cb =5.0v, i e =0, f=100khz 4 pf emitter-base capacitance c eb v eb =0.5v, i c =0, f=100khz 10 pf small-signal current gain 2n5088 h fe v ce =5.0v, i c =1.0ma, f=1.0khz 350 1400 2n5089 450 1800 noise figure 2n5088 nf v ce =5.0v, i c =100 a, r s =10k , f=10khz ~ 15.7khz 3.0 db 2n5089 2.0 note pulse test: pulse width 300 s, duty cycle 2.0%
2n5088/2n5089 npn epitaxial silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r201-040.ba utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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